As semiconductor devices evolve into increasingly complex 3D architectures, metrology solutions need to advance to provide more comprehensive and full 3D profile insight.

Transmission Electron Microscopy (T.E.M.) delivers high-resolution 3D reference data, while Atomic Force Microscopy (AFM) enables non-destructive surface characterization — yet neither provides non-destructive, in-line full 3D profiling, especially in extreme high aspect ratio structures.

Building on the foundation of our propietary feed-forward trajectory planner (FFTP) mode, Nearfield Instruments introduces Sidewall Imaging Mode, combining sidewall force sensing, and advanced sensor fusion to determine the probe’s precise position in 3D space.

The result is full 3D, non-destructive, in-line profile measurement — from individual features to full wafers — expanding process insight and strengthening manufacturing control.